Dual N-Channel MOSFET
New Product
SMMB912DK
Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 4...
Description
New Product
SMMB912DK
Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 4.5 V RDS(on) (Ω) at VGS = 2.5 V RDS(on) (Ω) at VGS = 1.8 V ID (A)a Configuration
PowerPAK SC75-6L-Dual
D1 D2
FEATURES
20 0.216 0.268 0.375 1.5 Dual
1 S1 2 G1 D1 D1 6 5 1.60 mm G2 4 S2 1.60 mm D2
S1 N-Channel MOSFET S2 N-Channel MOSFET
3 D2
G1
G2
High Quality Manufacturing Process Using SMM Process Flow Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC Find out more about Vishay’s Medical Products at: www.vishay.com/medical-mosfets
APPLICATION EXAMPLES
Medical Implantable Applications Including - Drug Delivery Systems - Defibrillators - Pacemakers - Hearing Aids - Other Implantable Devices Load Switch, PA Switch and Battery Switch for Portable Devices DC/DC Converter
Marking Code
MBX Part # code XXX Lot Traceability and Date code
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free PowerPAK SC-75 SMMB912DK-T1-GE3
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage TC = 25 °Ca Continuous Drain Current (TJ = 150 °C) TC = 70 °Ca TA = 25 °Cb, c TA = 70 °Cb, c Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °Ca TA = 25 °Cb, c TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °Cb, c TA = 70 °Cb, c...
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