SMMBD7000LT3G

MMBD7000LT1G, SMMBD7000LT1G, MMBD7000LT3G, SMMBD7000LT3G Dual Switching Diode http://onsemi.com Features  AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Compliant*  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS SOT−23 (TO−236) CASE 318 STYLE 11 MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 100 200 500 Unit Vdc mAdc mAdc 1 ANODE 3 CATHODE/ANODE 2 CATHODE MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. M5C MG G 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1)TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 Unit mW mW/C C/W mW M5C M G = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−...