SMMBD914LT1G

MMBD914LT1G, SMMBD914LT1G, MMBD914LT3G, SMMBD914LT3G High-Speed Switching Diode Features http://onsemi.com  AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 3 CATHODE Symbol VR IF IFM(surge) Value 100 200 500 Unit Vdc mAdc mAdc 1 5D M G SOT−23 CASE 318 STYLE 8 MAXIMUM RATINGS Rating Reverse Voltage Forward Current Peak Forward Surge Current 1 ANODE MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 − 55 to +150 Unit mW mW/C C/W mW mW/C C/W C 5D M G G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBD914LT1G SMMBD914LT1G MMBD914LT3G SMMBD914LT3G Package SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) Shipping† 3,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel 10,000 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functi...