General Purpose Transistors
NPN Silicon
MMBT2222L, MMBT2222AL, SMMBT2222AL
Features
• These Devices are Pb−Free, Haloge...
General Purpose
Transistors
NPN Silicon
MMBT2222L, MMBT2222AL, SMMBT2222AL
Features
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
VCEO
Vdc
MMBT2222L
30
MMBT2222AL, SMMBT2222AL
40
Collector −Base Voltage
VCBO
Vdc
MMBT2222L
60
MMBT2222AL, SMMBT2222AL
75
Emitter −Base Voltage
VEBO
Vdc
MMBT2222L
5.0
MMBT2222AL, SMMBT2222AL
6.0
Collector Current − Continuous Collector Current − Peak (Note 3) THERMAL CHARACTERISTICS
IC
600
mAdc
ICM
1100
mAdc
Characteristic
Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C
Symbol PD
Max
225 1.8
Unit
mW mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C
RqJA PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Reference SOA curve.
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COLLECTOR 3
1 BASE
2 EMITTER...