Document
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series
Driver Transistors
PNP Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage MMBTA55 MMBTA56, SMMBTA56
VCEO
−60 −80
Vdc
Collector −Base Voltage MMBTA55 MMBTA56, SMMBTA56
VCBO
−60 −80
Vdc
Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS
VEBO IC
−4.0 −500
Vdc mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C
PD 225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C
RqJA PD
556 °C/W
300 mW 2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W.