Document
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
September 2009
H11AA1M, H11AA2M, H11AA3M, H11AA4M AC Input/Phototransistor Optocouplers
Features
■ Bi-polar emitter input ■ Built-in reverse polarity input protection ■ Underwriters Laboratory (UL) recognized File #E90700, Volume 2 ■ VDE approved File #102497 (ordering option ‘V’)
Description
The H11AAXM series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output.
Applications
■ AC line monitor ■ Unknown polarity DC sensor ■ Telephone line interface
Schematic
Package Outlines
1
6 BASE
2
5 COLL
3
4 EMITTER
©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Absolute Maximum Ratings (TA =25°C Unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE TSTG TOPR TSOL PD EMITTER IF IF(pk) PD DETECTOR IC PD
Parameter
Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation Derate Linearly From 25°C Continuous Forward Current Forward Current – Peak (1µs pulse, 300 pps) LED Power Dissipation Derate Linearly From 25°C Continuous Collector Current Detector Power Dissipation Derate linearity from 25°C
Device
All All All All
Value
-40 to +150 -40 to +100 260 for 10 sec 250 2.94
Units
°C °C °C mW mW/°C mA A mW mW/°C mA mW mW/°C
All All All
60 ±1.0 120 1.41
All All
50 150 1.76
©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com 2
Free Datasheet http://www.datasheet4u.com/
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Electrical Characteristics (TA = 25°C Unless otherwise specified.)
Individual Component Characteristics Symbol
EMITTER VF CJ BVCEO BVCBO BVEBO BVECO ICEO Input Forward Voltage Capacitance Breakdown Voltage Collector to Emitter Collector to Base Emitter to Base Emitter to Collector Leakage Current Collector to Emitter IF = ±10mA VF = 0 V, f = 1.0MHz IC = 1.0mA, IF = 0 IC = 100µA, IF = 0 IE = 100µA, IF = 0 IE = 100µA, IF = 0 VCE = 10 V, IF = 0 All All All All All All H11AA1M H11AA3M H11AA4M H11AA2M CCE CCB CEB Capacitance Collector to Emitter Collector to Base Emitter to Base VCE = 0, f = 1MHz VCB = 0, f = 1MHz VEB = 0, f = 1MHz All All All 30 70 5 7 1.17 80 100 120 10 10 1 50 1.5 V pF V V V V nA
Parameter
Test Conditions
Device
Min.
Typ.*
Max.
Unit
DETECTOR
1 10 80 15
200 pF pF pF
*Typical values at TA = 25°C
Transfer Characteristics Symbol
CTRCE
Characteristics
Current Transfer Ratio, Collector to Emitter
Test Conditions
IF = ±10mA, VCE = 10V
Device
H11AA4M H11AA3M H11AA1M H11AA2M
Min.
100 50 20 10 .33
Typ.*
Max.
Units
%
Current Transfer Ratio, Symmetry VCE(SAT) Saturation Voltage, Collector to Emitter
IF = ±10mA, VCE = 10V (Figure 11) IF = ±10mA, ICE = 0.5mA
All All
3.0 .40 V
Isolation Characteristics Symbol
CI-O VISO RISO
Characteristic
Package Capacitance Input/Output Isolation Voltage Isolation Resistance
Test Conditions
VI-O = 0, f = 1MHz f = 60Hz, t = 1 sec. VI-O = 500 VDC
Min.
Typ.*
0.7
Max.
Units
pF Vac(pk) Ω
7500 1011
*Typical values at TA = 25°C
©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com 3
Free Datasheet http://www.datasheet4u.com/
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Installation Classifications per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms For Rated Main voltage < 300Vrms Climatic Classification Pollution Degree (DIN VDE 0110/1.89)
Min.
Typ.
Max.
Unit
I-IV I-IV 55/100/21 2 175 1594 Vpeak
CTI VPR
Comparative Tracking Index Input to Output Test Voltage, Method b, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 sec, Partial Discharge < 5pC Input to Output Test Voltage, Method a, VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 sec, Partial Discharge < 5pC
1275
Vpeak
VIORM VIOTM
Max. Working Insulation Voltage Highest Allowable Over Voltage External Creepage External Clearance Insulation Thickness
850 6000 7 7 0.5 109
Vpeak Vpeak mm mm mm Ω
RIO
Insulation Resistance at Ts, VIO = 500V
©2006 Fairchild Semiconductor Corporati.