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H11AA2M Dataheets PDF



Part Number H11AA2M
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description (H11AA1M - H11AA4M) AC Input/Phototransistor Optocouplers
Datasheet H11AA2M DatasheetH11AA2M Datasheet (PDF)

H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers September 2009 H11AA1M, H11AA2M, H11AA3M, H11AA4M AC Input/Phototransistor Optocouplers Features ■ Bi-polar emitter input ■ Built-in reverse polarity input protection ■ Underwriters Laboratory (UL) recognized File #E90700, Volume 2 ■ VDE approved File #102497 (ordering option ‘V’) Description The H11AAXM series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single sili.

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H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers September 2009 H11AA1M, H11AA2M, H11AA3M, H11AA4M AC Input/Phototransistor Optocouplers Features ■ Bi-polar emitter input ■ Built-in reverse polarity input protection ■ Underwriters Laboratory (UL) recognized File #E90700, Volume 2 ■ VDE approved File #102497 (ordering option ‘V’) Description The H11AAXM series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output. Applications ■ AC line monitor ■ Unknown polarity DC sensor ■ Telephone line interface Schematic Package Outlines 1 6 BASE 2 5 COLL 3 4 EMITTER ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 www.fairchildsemi.com Free Datasheet http://www.datasheet4u.com/ H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers Absolute Maximum Ratings (TA =25°C Unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol TOTAL DEVICE TSTG TOPR TSOL PD EMITTER IF IF(pk) PD DETECTOR IC PD Parameter Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation Derate Linearly From 25°C Continuous Forward Current Forward Current – Peak (1µs pulse, 300 pps) LED Power Dissipation Derate Linearly From 25°C Continuous Collector Current Detector Power Dissipation Derate linearity from 25°C Device All All All All Value -40 to +150 -40 to +100 260 for 10 sec 250 2.94 Units °C °C °C mW mW/°C mA A mW mW/°C mA mW mW/°C All All All 60 ±1.0 120 1.41 All All 50 150 1.76 ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 www.fairchildsemi.com 2 Free Datasheet http://www.datasheet4u.com/ H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers Electrical Characteristics (TA = 25°C Unless otherwise specified.) Individual Component Characteristics Symbol EMITTER VF CJ BVCEO BVCBO BVEBO BVECO ICEO Input Forward Voltage Capacitance Breakdown Voltage Collector to Emitter Collector to Base Emitter to Base Emitter to Collector Leakage Current Collector to Emitter IF = ±10mA VF = 0 V, f = 1.0MHz IC = 1.0mA, IF = 0 IC = 100µA, IF = 0 IE = 100µA, IF = 0 IE = 100µA, IF = 0 VCE = 10 V, IF = 0 All All All All All All H11AA1M H11AA3M H11AA4M H11AA2M CCE CCB CEB Capacitance Collector to Emitter Collector to Base Emitter to Base VCE = 0, f = 1MHz VCB = 0, f = 1MHz VEB = 0, f = 1MHz All All All 30 70 5 7 1.17 80 100 120 10 10 1 50 1.5 V pF V V V V nA Parameter Test Conditions Device Min. Typ.* Max. Unit DETECTOR 1 10 80 15 200 pF pF pF *Typical values at TA = 25°C Transfer Characteristics Symbol CTRCE Characteristics Current Transfer Ratio, Collector to Emitter Test Conditions IF = ±10mA, VCE = 10V Device H11AA4M H11AA3M H11AA1M H11AA2M Min. 100 50 20 10 .33 Typ.* Max. Units % Current Transfer Ratio, Symmetry VCE(SAT) Saturation Voltage, Collector to Emitter IF = ±10mA, VCE = 10V (Figure 11) IF = ±10mA, ICE = 0.5mA All All 3.0 .40 V Isolation Characteristics Symbol CI-O VISO RISO Characteristic Package Capacitance Input/Output Isolation Voltage Isolation Resistance Test Conditions VI-O = 0, f = 1MHz f = 60Hz, t = 1 sec. VI-O = 500 VDC Min. Typ.* 0.7 Max. Units pF Vac(pk) Ω 7500 1011 *Typical values at TA = 25°C ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 www.fairchildsemi.com 3 Free Datasheet http://www.datasheet4u.com/ H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers Safety and Insulation Ratings As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms For Rated Main voltage < 300Vrms Climatic Classification Pollution Degree (DIN VDE 0110/1.89) Min. Typ. Max. Unit I-IV I-IV 55/100/21 2 175 1594 Vpeak CTI VPR Comparative Tracking Index Input to Output Test Voltage, Method b, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 sec, Partial Discharge < 5pC Input to Output Test Voltage, Method a, VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 sec, Partial Discharge < 5pC 1275 Vpeak VIORM VIOTM Max. Working Insulation Voltage Highest Allowable Over Voltage External Creepage External Clearance Insulation Thickness 850 6000 7 7 0.5 109 Vpeak Vpeak mm mm mm Ω RIO Insulation Resistance at Ts, VIO = 500V ©2006 Fairchild Semiconductor Corporati.


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