Preliminary Data Sheet
2SC5337
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimo...
Preliminary Data Sheet
2SC5337
NPN Silicon RF
Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
FEATURES
Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz 4-pin power minimold package with improved gain from the 2SC4536
R09DS0047EJ0300 Rev.3.00 Sep 14, 2012
ORDERING INFORMATION
Part Number 2SC5337 2SC5337-T1 Order Number 2SC5337-AZ 2SC5337-T1-AZ Package 4-pin power minimold (Pb-Free)
Note
Quantity 25 pcs (Non reel) 1 kpcs/reel
Supplying Form Magazine case 12 mm wide embossed taping Collector face the perforation side of the tape
Note Contains Lead in the part except the electrode terminals. Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot
Note
Ratings 30 15 3.0 250 2.0 150 −65 to +150
Unit V V V mA W °C °C
Tj Tstg
2 Note Mounted on 16 cm × 0.7 mm (t) ceramic substrate (Copper plating)
CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark shows major revised points. The revised points can be easily searched by copying an...
View 2SC5337 Datasheet
