NE3519M04

PreliminaryData Sheet NE3519M04 N-channel GaAs HJ-FET, L to C Band Low Noise FEATURES R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Amplifier Low noise figure and high associated gain NF = 0.40 dB TYP., Ga = 18.5 dB TYP. @VDS = 2 V, ID = 10 mA, f = 2 GHz Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS Satellite radio (SDARS, etc.) Low noise amplifier for microwave communication system ORDERING INFORMATION Part Number NE3519M04-T2 NE3519M04-T2B Order Number NE3519M04-T2-A NE3519M04-T2B-A Package Flat-lead 4-pin thin-type super minimold (M04) (Pb-Free) Quantity 3 kpcs/reel 15 kpcs/reel Marking V85 Supplying Form Embossed tape 8 mm wide Pin 1 (Source), Pin 2 (Drain) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE3519M04 ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Note Channel Temperature Storage Temperature Note: Symbol VDS VGS ID IG Ptot Tch Tstg Ratings 4.0 −3.0 IDSS 200 150 +150 −65 to +150 Unit V V mA μA mW °C °C Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Page 1 of 11 Free Datasheet http://www.datasheet4u.com/ NE3519M04 RECOMMENDED OPERATING RANGE (TA = +25°C) Par...