NE3520S03

Data Sheet NE3520S03 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain FEATURES Low noise figure and high associated gain: NF = 0.65 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz, VDS = 2 V, ID = 10 mA K band Micro-X plastic (S03) package R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 APPLICATIONS 20 GHz band DBS LNB Other K band communication system ORDERING INFORMATION Part Number NE3520S03-T1C Order Number NE3520S03-T1C-A Package S03 package (Pb-Free) Quantity 2 kpcs/reel Marking J Supplying Form Embossed tape 8 mm wide Pin 4 (Gate) face the perforation side of the tape NE3520S03-T1D NE3520S03-T1D-A 10 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE3520S03 ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Note Symbol VDS VGS ID IG Ptot Tch Ratings 4.0 –3.0 IDSS 100 165 +125 Unit V V mA μA mW °C °C Storage Temperature Tstg –65 to +125 Note: Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 Page 1 of 8 Free Datasheet http://www.datasheet4u.com/ NE3520S03 RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Parameter Drain to Source Voltage Drain Current Input Power Symbol VDS ID Pin MIN. ...