NE5550234

Data Sheet NE5550234 Silicon Power MOS FET FEATURES R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) High Linear gain : GL = 23.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm) High ESD tolerance Suitable for VHF to UHF-BAND Class-AB power amplifier. APPLICATIONS 150 MHz Band Radio System 460 MHz Band Radio System 900 MHz Band Radio System ORDERING INFORMATION Part Number NE5550234 Order Number NE5550234-AZ Package 3-pin power minimold (34 PKG) (Pb-Free) Marking V5 Supplying Form 12 mm wide embossed taping Gate pin faces the perforation side of the tape 12 mm wide embossed taping Gate pin faces the perforation side of the tape Qty 1 kpcs/reel NE5550234-T1 NE5550234-T1-AZ Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE5550234 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Operation in excess of any one of these parameters may result in permanent damage. Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current (50% Duty Pulsed) Total Power Dissipation Note Channel Temperature Storage Temperature Note: Value at TC = 25°C Symbol VDS VGS IDS IDS-pulse Ptot Tch Tstg Ratings 30 6.0 0.6 1.2 12.5 150 −65 to +150 Unit V V A A W °C °C CAUTION O...