NE5550779A

Data Sheet NE5550779A Silicon Power LDMOS FET FEATURES R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm) High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm) High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 10 dBm) High ESD tolerance Suitable for VHF to UHF-BAND Class-AB power amplifier. APPLICATIONS 150 MHz Band Radio System 460 MHz Band Radio System 900 MHz Band Radio System ORDERING INFORMATION Part Number NE5550779A Order Number NE5550779A-A Package 79A (Pb-Free) Marking W8 Supplying Form 12 mm wide embossed taping Gate pin faces the perforation side of the tape NE5550779A-T1 12 mm wide embossed taping Gate pin faces the perforation side of the tape Qty 1 kpcs/reel NE5550779A-T1A NE5550779A-T1A-A 12 mm wide embossed taping Gate pin faces the perforation side of the tape Qty 5 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE5550779A NE5550779A-T1-A ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Operation in excess of any one of these parameters may result in permanent damage. Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current (50% Duty Pulsed) Total Power Dissipation Note Channel Temperature Storage Temperature Note: Value at TC = 25°C Symbo...