Data Sheet
NE5550979A
Silicon Power LDMOS FET
FEATURES
R09DS0031EJ0300 Rev.3.00 Mar 12, 2013
High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) High Linear gain : GL = 22 dB TYP. (VDS = 7.5 V, IDse...
