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2N4222-A
2N4222, 2N4222A N-Channel JFET
Features
• InterFET N0032H Geometry • Typical Noise: 7 nV/√Hz • Low Ciss: 6.0pF Typical • RoHS Compliant • SMT, TH, and Bare Die Package options.
Applications
• Mixers • Oscillators • VHF Amplifiers • Small Signal Amplifiers
Description
The -50V InterFET 2N4222 and 2N4222A are targeted for sensitive amplifier stages for midfrequencies designs. The “A” variants are screened for lower noise. The TO-72 package is hermetically sealed and suitable for military applications.
Gate Drain 2 Source
TO-72 Bottom View
3 4 Case
1
Source 1 Drain 2
SOT23 Top View 3 Gate
Gate 3 Drain 2 Source 1
TO-92 Bottom View
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS
Drain to Source Saturation Current
VGS(off) Gate to Source Cutoff Voltage
GFS
Forward Transconductance
2N4222 Min -30 5
2500
Ordering Information Custom Part and Binning Options Available
Part Number
Description
2N4222; 2N4222A
Through-Hole
PN4222; PN4222A
Through-Hole
SMP4222; SMP4222A
Surface Mount
7“ Tape and Reel: Max 3,000 Pieces
SMP4222TR; SMP4222ATR 13” Tape and Reel: Max 9,000 Pieces
2N4222COT; 2N4222ACOT Chip Orientated Tray (COT Waffle Pack)
2N4222CFT; 2N4222ACFT Chip Face-up Tray (CFT Waffle Pack)
Case TO-72 TO-92 SOT23
SOT23 COT CFT
2N4222A Min
Unit
-30
V
5
mA
V
2500
µS
Packaging Bulk Bulk Bulk
Minimum 1,000 Pieces Tape and Reel 400/Waffle Pack 400/Waffle Pack
Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice.
IF35038.R00
InterFET
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2N4222-A
Electrical Characteristics
Maximum Ratings (@ TA = 25°C, Unless otherwise specified)
Parameters VRGS Reverse Gate Source and Gate Drain Voltage IFG Continuous Forward Gate Current PD Continuous Device Power Dissipation P Power Derating TJ Operating Junction Temperature TSTG Storage Temperature
Static Characteristics (@ TA = 25°C, Unless otherwise specified)
V(BR)GSS IGSS VGS VGS(OFF) IDSS
Parameters Gate to Source Breakdown Voltage Gate to Source Reverse Current
Gate Source Voltage
Gate to Source Cutoff Voltage Drain to Source Saturation Current
Conditions VDS = 0V, IG = -1μA VGS = -15V, VDS = 0V, TA = 25°C VGS = -15V, VDS = 0V, TA = 150°C VDS = 15V, ID = ( )
VDS = 15V, ID = 0.1nA VGS = 0V, VDS = 15V
(Pulsed)
Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified)
Parameters
GFS
Forward Transconductance
GOS
Output Conductance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
NF
Noise Figure
Conditions VDS = 15V, VGS = 0V, f = 1kHz
VDS = 15V, VGS = 0V, f = 1kHz
VDS = 15V, VGS = 0V, f = 1MHz
VDS = 15V, VGS = 0V, f .