RD2006FR

Ordering number : ENA1832 RD2006FR SANYO Semiconductors DATA SHEET RD2006FR Features Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode VF=1.75V max (IF=20A) VRRM=600V trr=21ns (typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM DC bias Sine wave, 10ms single pulse Conditions Ratings 600 20 220 150 --55 to +150 Unit V A A °C °C IO IFSM Tj Tstg Package Dimensions unit : mm (typ) 7532-001 10.16 3.18 3.3 4.7 2.54 Product & Package Information Package : TO-220F-2FS JEITA, JEDEC : SC-67 Minimum Packing Quantity : 50 pcs./magazine Marking Electrical Connection 2 15.8 15.87 6.68 3.23 1.28 RD2006 FR LOT No. 0.8 MAX 1 * 1.47 MAX 0.8 1 2.76 12.98 2 0.5 part is not a metal * : This but a resin 5.08 1 : Cathode 2 : Anode SANYO : TO-220F-2FS http://semicon.sanyo.com/en/network 91510SA TK IM TC-00002488 No. A1832-1/3 Free Datasheet http://www.datasheet4u.com/ RD2006FR Electrical Characteristics at Ta=25°C Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF IR trr1 trr2 Rth(j-c) IR=1mA IF=20A VR=600V IF=10A, di / dt=100A/μs IF=0.5A, IR=1A Between the junction part and the case smoothing current 21 3.5 Conditions Ratings min 600 1.6 1.75 100 50 typ max Unit V V μA ns ns °C / W 100 7 5 3 2 IF -- VF 70 °C 25°C 10...