RD2004LS-SB5

Ordering number : ENA1612 RD2004LS-SB5 SANYO Semiconductors DATA SHEET RD2004LS-SB5 Features Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode High breakdown voltage (VRRM=400V). High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. Fast reverse recovery time. Low noise at the time of reverse recovery. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM Conditions Ratings 400 400 20 Sine wave, 10ms single pulse 180 150 --55 to +150 Unit V V A A °C °C IO IFSM Tj Tstg Electrical Characteristics at Ta=25°C Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF IR trr1 trr2 Rth(j-c) IR=1mA IF=20A VR=400V IF=10A, di / dt=100A/μs IF=0.5A, IR=1A Junction-Case : Smoothed DC 44 20 4.0 Conditions Ratings min 400 1.3 1.5 100 50 typ max Unit V V μA ns ns °C / W Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to ...