RD2003JS-SB

Ordering number : ENA1904 RD2003JS-SB SANYO Semiconductors DATA SHEET RD2003JS-SB Features Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode VF=1.3V max. (IF=20A) VRRM=300V trr=20ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Non-repeated Peak Reverse Surge Voltage Average Output Current R.M.S Forward Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM DC bias PW≤100μs, duty ≤ 0.1 50Hz resistive load, Sine wave Tc=38°C Tc=25°C (SANYO’s ideal heat dissipation condition) Package limited, DC 50Hz sine wave 1pulse Conditions Ratings 300 350 20 25 180 150 --55 to +150 Unit V V A A A °C °C IO IF(RMS) IFSM Tj Tstg Package Dimensions unit : mm (typ) 7533-001 10.0 3.2 3.5 4.5 2.8 Product & Package Information Package : TO-220ML(LS) JEITA, JEDEC : SC-67, SOT-186A Minimum Packing Quantity : 100 pcs./bag, 50 pcs./magazine 7.2 Marking 16.0 Electrical Connection 2 1.0 RD2003 1.6 2 0.75 1 3 1.2 14.0 LOT No. 3.6 1 0.7 1 : Cathode 2 : Anode SANYO : TO-220ML(LS)-SB 2.55 2.55 2.4 http://semicon.sanyo.com/en/network 10511SA TKIM TC-00002482 No. A1904-1/3 Free Datasheet http://www.datasheet4u.com/ RD2003JS-SB Electrical Characteristics at Ta=25°C Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF IR trr1 trr2 Rth(j-c) IR=1mA IF=20A VR=300V IF=10A, di / dt=100A/μs IF=0.5A, IR=1A Junction-Case : Smoo...