STB18N65M5

STB18N65M5, STD18N65M5 N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in D²PAK and DPAK packages Datasheet — production data Features Order codes STB18N65M5 STD18N65M5 ■ ■ ■ ■ VDSS @ TJmax 710 V RDS(on) max < 0.22 Ω ID 15 A TAB TAB 2 3 1 2 3 1 Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capability Excellent switching performance 100% avalanche tested Figure 1. D2PAK DPAK Applications ■ Internal schematic diagram Switching applications $4!" Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. ' 3 !-V Table 1. Device summary Marking 18N65M5 Package D2PAK Tape and reel DPAK Packaging Order codes STB18N65M5 STD18N65M5 July 2012 This is information on a product in full production. Doc ID 023446 Rev 1 1/18 www.st.com 18 Free Datasheet http://www.datasheet4u.com/ Contents STB18N65M5, STD18N65M5 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrica...