N-channel Power MOSFET
STB18N55M5, STF18N55M5
Datasheet
N-channel 550 V, 0.150 Ω typ., 16 A MDmesh™ M5 Power MOSFETs in a D2PAK and TO-220FP pa...
Description
STB18N55M5, STF18N55M5
Datasheet
N-channel 550 V, 0.150 Ω typ., 16 A MDmesh™ M5 Power MOSFETs in a D2PAK and TO-220FP packages
Features
TAB
) 3 t(s 1 c D2PAK
3 2 1
TO-220FP
Produ D(2, TAB)
Order code
VDS @ Tjmax.
RDS(on)max.
STB18N55M5 STF18N55M5
600 V
0.192 Ω
Extremely low RDS(on) Low gate charge and input capacitance Excellent switching performance 100% avalanche tested
Package
D2PAK TO-220FP
lete Applications
so G(1)
Switching applications
) - Ob S(3)
AM01475v1_noZen
roduct(s Product status link te P STB18N55M5 Obsole STF18N55M5
Description
These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.
DS12715 - Rev 1 - August 2018 For further information contact your local STMicroelectronics sales office.
www.st.com
STB18N55M5, STF18N55M5
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
D2PAK
TO-220FP
VGS
Gate-source voltage
±25
V
ID
Drain current (continuous) at TC = 25 °C
) ID
Drain current (continuous) at TC = 100 °C
t(s IDM (1)
Drain current (pulsed)
uc PTOT
Total dissipation at TC = 25 °C
d dv/dt (2) Peak diode recovery voltage slope
te Pro VISO
Insulation withstand voltage (RMS)
from all three leads to exter...
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