GT20J341

GT20J341 Discrete IGBTs Silicon N-Channel IGBT GT20J341 1. Applications Motor Drivers 2. Features (1) (2) (3) Sixth generation Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 20 A) FRD included between emitter and collector 3. Packaging and Internal Circuit 1: Gate 2: Collector 3: Emitter TO-220SIS 1 2012-04-26 Rev.2.0 Free Datasheet http://www.datasheet4u.com/ GT20J341 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (DC) Collector current (pulsed) Diode forward current (DC) Diode forward current (DC) Short circuit withstand time Collector power dissipation Junction temperature Storage temperature (Tc = 25) (Tc = 25) (Tc = 100) (Note 1) (Tc = 25) (Tc = 100) Symbol VCES VGES IC IC ICP IF IF tsc PC Tj Tstg Rating 600 ±25 20 11 80 20 9 5 45 150 -55 to 150 µs W  A Unit V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and...