JDV2S19S

JDV2S19S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S19S VCO for the UHF band High capacitance ratio: C1V/C4V = 1.8 (typ.) Low series resistance: rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 −55~150 Unit V °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC JEITA TOSHIBA ― ― 1-1K1A Weight: 0.0011 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C1V C4V C1V/C4V rs IR = 1 μA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ⎯ VR = 1 V, f = 470 MHz Test Condition Min 10 ⎯ 3.46 1.83 1.74 ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 0.35 Max ⎯ 3 3.87 2.13 1.91 0.47 Unit V nA pF ⎯ Ω Note: Signal level when capacitance is measured: Vsig = 100 mVrms Marking...