DF N1 01
PBSS5260QA
28 August 2013
0D -3
60 V, 1.7 A PNP low VCEsat (BISS) transistor
Product data sheet
1. General...
DF N1 01
PBSS5260QA
28 August 2013
0D -3
60 V, 1.7 A
PNP low VCEsat (BISS)
transistor
Product data sheet
1. General description
PNP low VCEsat Breakthrough In Small Signal (BISS)
transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
NPN complement: PBSS4260QA.
2. Features and benefits
Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified
3. Applications
Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance tp ≤ 1 ms; pulsed IC = -1 A; IB = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Conditions open base Min Typ 195 Max -60 -1.7 -2.5 280 Unit V A A mΩ
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NXP Semiconductors
PBSS5260QA
60 V, 1.7 A
PNP low VCEsat (BISS)
transistor
5. Pinning information
Table 2. Pin 1 2 3 4 Pinning information Symbol Description B E C C base emitter collector collector
2 Transparent...