PBSS5160V

PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V. 1.2 Features „ „ „ „ „ Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistors BCP52 and BCX52 1.3 Applications „ Major application segments ‹ Automotive ‹ Telecom infrastructure ‹ Industrial „ Power management ‹ DC-to-DC conversion ‹ Supply line switching „ Peripheral driver ‹ Driver in low supply voltage applications (e.g. lamps and LEDs) ‹ Inductive load driver (e.g. relays, buzzers and motors) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance IC = −1 A; IB = −100 mA Conditions open base [1] Min - Typ 220 Max −60 −1 −2 330 Unit V A A mΩ Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint. Free Datasheet http://www.datasheet4u.com/ NXP Semiconductors PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1, 2, 5, 6 3 4 Pinning Description collector base emitter 6 5 4 3 4 1 2 3 sym030 Simplified outline Symbol 1, 2, 5...