PMDXB600UNE

DF N1 0 PMDXB600UNE 16 September 2013 10B -6 20 V, dual N-channel Trench MOSFET Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 600 mA; Tj = 25 °C [1] Quick reference data Parameter Conditions Tj = 25 °C Min -8 Typ Max 20 8 600 Unit V V mA Static characteristics (per transistor) drain-source on-state resistance [1] 2 - 470 620 mΩ Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm . Scan or click this QR code to view the latest information for this product Free Datasheet http://www.datasheet4u.com/ NXP Semiconductors PMDXB600UNE 20 V, dual N-channel Trench MOSFET 5. Pinning information Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description S1 G1 D2 S2 G2 D1 ...