PMXB360ENEA

DF N1 01 PMXB360ENEA 16 September 2013 0D -3 80 V, N-channel Trench MOSFET Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Tin-plated 100 % solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified 3. Applications Relay driver Power management in automotive and industrial applications LED driver DC-to-DC converter 4. Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 1.1 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -20 - Typ - Max 80 20 1.1 Unit V V A Static characteristics drain-source on-state resistance [1] 2 - 345 450 mΩ Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . Scan or click this QR code to view the latest information for this product Free Datasheet http://www.datasheet4u.com/ NXP Semiconductors PMXB360ENEA 80 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pin 1 2 3 4 Pinning information Symbol Description G S D D gate source drain drain 2 Transparent top view ...