PMXB43UNE

DF N1 01 PMXB43UNE 19 September 2013 0D -3 20 V, N-channel Trench MOSFET Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction Very low Drain-Source on-state resistance RDSon = 42 mΩ in high density 1 kV ESD protected 3. Applications Low-side load switch and charging switch for portable devices Power management in battery-driven portables LED driver DC-to-DC converters 4. Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 3.2 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ - Max 20 8 3.2 Unit V V A Static characteristics drain-source on-state resistance [1] 2 - 42 54 mΩ Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . Scan or click this QR code to view the latest information for this product Free Datasheet http://www.datasheet4u.com/ NXP Semiconductors PMXB43UNE 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pin 1 2 3 4 Pinning information Symbol Description G S D D gate source drain ...