PMXB56EN

DFN1010D-3 PMXB56EN 30 V, N-channel Trench MOSFET 11 January 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction Very low Drain-Source on-state resistance RDSon = 49 mΩ Very fast switching 3. Applications Low-side load switch and charging switch for portable devices Power management in battery-driven portables LED driver DC-to-DC converters 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 3.2 A; Tj = 25 °C Min Typ Max - - 30 -20 - [1] - - 20 3.2 - 49 55 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Unit V V A mΩ NXP Semiconductors PMXB56EN 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain 4 D drain Simplified outline 1 43 2 Graphic symbol D G S 017aaa253 Transparent top view DFN1010D-3 (SOT1215) 6. Ordering informati...