RN2901AFS~RN2906AFS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Transistor with Built-in Bias Resistor)...
RN2901AFS~RN2906AFS
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT process) (
Transistor with Built-in Bias Resistor)
RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, RN2906AFS
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
1.0±0.05
Unit: mm
Incorporating a bias resistor into a
transistor reduces the parts count. Reducing the parts count enables the manufacture of ever more compact equipment and saves assembly cost. Complementary to the RN1901AFS to RN1906AFS
0.35 0.35
1.0±0.05
0.7±0.05
1 2 3
6 5 4 0.1±0.05
C
Type No. RN2901AFS RN2902AFS
R1 (kΩ) 4.7 10 22 47 2.2 4.7
R2 (kΩ) 4.7 10 22 47 47 47
0.48
+0.02 -0.04
Equivalent Circuit and Bias Resistor Values
B
R1 R2
RN2903AFS RN2904AFS E RN2905AFS RN2906AFS
fS6 JEDEC JEITA TOSHIBA
1.EMITTER1 2.BASE1 3.COLLECTOR2 4.EMITTER2 5.BASE2 6.COLLECTOR1
(E1) (B1) (C2) (E2) (B2) (C1)
― ― 2-1F1D
Weight: 1 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2901AFS to 2906AFS RN2901AFS to 2906AFS RN2901AFS to 2904AFS RN2905AFS, 2906AFS Symbol VCBO VCEO VEBO IC PC (Note 1) Tj Tstg Rating −50 −50 −10 −5 −80 50 150 −55 to 150 Unit V V
Equivalent Circuit (top view)
6 5 4
Q1 V mA mW °C °C
1
2
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/v...
