RN2903FE

RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2901FE,RN2902FE,RN2903FE RN2904FE,RN2905FE,RN2906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Complementary to RN1901FE~RN1906FE Unit: mm Equivalent Circuit and Bias Resistor Values C Type No. RN2901FE B R1 R2 RN2902FE RN2903FE RN2904FE E RN2905FE RN2906FE R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 JEDEC JEITA TOSHIBA ― ― 2-2N1G Weight:0.003 g (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Equivalent Circuit Symbol RN2901FE~ RN2906FE RN2901FE~ RN2904FE RN2905FE, RN2906FE VCBO VCEO Rating −50 −50 −10 VEBO −5 IC RN2901FE~ RN2906FE PC (Note 1) Tj Tstg −100 100 150 −55~150 mA mW °C °C V Unit V V Characteristics Collector-base voltage Collector-emitter voltage (top view) 6 5 4 Q1 Q2 Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range 1 2 3 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating ...