RN2901FS~RN2906FS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN290...
RN2901FS~RN2906FS
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT process) (Bias Resistor built-in
Transistor)
RN2901FS,RN2902FS,RN2903FS RN2904FS,RN2905FS,RN2906FS
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
1.0±0.05
Unit: mm
1.0±0.05
Incorporating a bias resistor into a
transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost.
0.7±0.05
0.35 0.35
1 2 3
6 5 4 0.1±0.05
Complementary to RN1901FS~RN1906FS
+0.02 -0.04
Equivalent Circuit and Bias Resistor Values
C Type No. RN2901FS RN2902FS R2 RN2903FS RN2904FS E RN2905FS RN2906FS R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47
0.48
B
R1
fS6
JEDEC JEITA
1.EMITTER1 2.BASE1 3.COLLECTOR2 4.EMITTER2 5.BASE2 6.COLLECTOR1
(E1) (B1) (C2) (E2) (B2) (C1)
― ― 2-1F1D
TOSHIBA
Weight: 0.001g (typ.)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2901FS~2906FS RN2901FS~2906FS RN2901FS~2904FS RN2905FS, 2906FS Symbol VCBO VCEO VEBO IC PC (Note 1) Tj Tstg Rating −20 −20 −10 −5 −50 50 150 −55~150 Unit V V V mA mW °C °C 1 2 3 Q1 Q2
Equivalent Circuit
(top view)
6 5 4
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) ...