RN2906FS

RN2901FS~RN2906FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2901FS,RN2902FS,RN2903FS RN2904FS,RN2905FS,RN2906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. 0.7±0.05 0.35 0.35 1 2 3 6 5 4 0.1±0.05 Complementary to RN1901FS~RN1906FS +0.02 -0.04 Equivalent Circuit and Bias Resistor Values C Type No. RN2901FS RN2902FS R2 RN2903FS RN2904FS E RN2905FS RN2906FS R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 0.48 B R1 fS6 JEDEC JEITA 1.EMITTER1 2.BASE1 3.COLLECTOR2 4.EMITTER2 5.BASE2 6.COLLECTOR1 (E1) (B1) (C2) (E2) (B2) (C1) ― ― 2-1F1D TOSHIBA Weight: 0.001g (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2901FS~2906FS RN2901FS~2906FS RN2901FS~2904FS RN2905FS, 2906FS Symbol VCBO VCEO VEBO IC PC (Note 1) Tj Tstg Rating −20 −20 −10 −5 −50 50 150 −55~150 Unit V V V mA mW °C °C 1 2 3 Q1 Q2 Equivalent Circuit (top view) 6 5 4 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) ...