RN2907FS

RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. 1.0±0.05 Unit: mm 0.35 0.35 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. 0.7±0.05 1 2 3 6 5 4 0.1±0.05 Complementary to RN1907FS to RN1909FS 0.48 -0.04 +0.02 Equivalent Circuit and Bias Resistor Values C Type No. RN2907FS RN2908FS R2 RN2909FS E R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 B R1 fS6 1.EMITTER1 1.EMIITTER1 2.BASE1 2.EMITTER2 3.COLLECTOR2 3.BASE2 4.EMITTER2 4.COLLECTOR2 5.BASE2 5.BASE1 6.COLLECTOR1 6.COLLECTOR1 (E1) (E1) (B1) (E2) (C2) (B2) (E2) (C2) (B2) (B2) (C1) (C1) JEDEC JEITA TOSHIBA ― ― 2-1F1D Weight: 1 mg (typ.) (Q1, Q2 common) Absolute Maximum Ratings (Ta = 25°C) Equivalent Circuit (top view) Rating −20 −20 −6 Unit V V Q1 Q2 Characteristics Collector-base voltage Collector-emitter voltage RN2907FS to RN2909FS RN2907FS Emitter-base voltage RN2908FS RN2909FS Collector current Collector power dissipation Junction temperature Storage temperature range RN2907FS to RN2909FS Symbol VCBO VCEO 6 5 4 VEBO −7 −15 V 1 mA mW °C °C 2 3 IC PC* Tj Tstg −50 50 150 −55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the signifi...