RN2910AFS, RN2911AFS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor...
RN2910AFS, RN2911AFS
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT Process) (
Transistor with Built-in Bias Resistor)
RN2910AFS, RN2911AFS
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. Incorporating a bias resistor into a
transistor reduces the parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly costs. Complementary to the RN1910AFS/RN1911AFS
0.1±0.05 0.35 0.35
Unit: mm
1.0±0.05 0.8±0.05 0.1±0.05 0.15±0.05
(E1) (B1) (C2) (E2) (B2) (C1) Unit nA nA V pF kΩ
1.0±0.05
0.7±0.05
1 2 3
6 5 4 0.1±0.05
C
0.48 -0.04
+0.02
Equivalent Circuit and Bias Resistor Values
B
R1
E
fS6 JEDEC JEITA
Symbol VCBO VCEO VEBO IC PC (Note 1) Tj Tstg Rating −50 −50 −5 −80 50 150 −55~150 Unit V V V mA mW °C °C Q1
1. EMITTER1 2. BASE1 3. COLLECTOR2 4. EMITTER2 5. BASE2 6. COLLECTOR1
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range
― ― 2-1F1D
TOSHIBA
Weight: 0.001 g (typ.)
Equivalent Circuit (top view)
6 5 4
Q2
Note: Using continuously under heavy loads (e.g. the application of high 1 2 3 temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly...
