RN2910FE

RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Complementary to RN1910FE, RN1911FE Unit: mm Equivalent Circuit and Bias Resistor Values C B R1 JEDEC E ― ― 2-2N1G JEITA TOSHIBA Weight: 0.003g (typ.) Equivalent Circuit (top view) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC (Note 1) Tj Tstg Rating −50 −50 −5 −100 100 150 −55~150 Unit V V V mA mW °C °C 1 2 3 Q1 Q2 6 5 4 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Con...