RN2910FS

RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2910FS, RN2911FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 Unit: mm 0.35 0.35 1.0±0.05 Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Complementary to RN1910FS and RN1911FS 0.7±0.05 Incorporating a bias resistor into a transistor reduces parts count. 1 2 3 6 5 4 0.1±0.05 Equivalent Circuit and Bias Resistor Values C 0.48 +0.02 -0.04 B R1 fS6 E 1.EMIITTER1 2.BASE1 3.COLLECTOR2 4.EMITTER2 5.BASE2 6.COLLECTOR1 (E1) (B1) (C2) (E2) (B2) (C1) JEDEC JEITA ― ― 2-1F1D Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC (Note 1) Tj Tstg Rating −20 −20 −5 −50 50 150 −55~150 Unit V V V mA mW °C °C TOSHIBA Weight: 0.001 g (typ.) Equivalent Circuit (top view) 6 5 4 Q1 Q2 1 2 3 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the a...