RN2912FS,RN2913FS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)
RN291...
RN2912FS,RN2913FS
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT process) (Bias Resistor Built-in
Transistor)
RN2912FS, RN2913FS
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
1.0±0.05
Unit: mm
0.35 0.35
1.0±0.05
Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Complementary to RN1912FS and RN1913FS
0.7±0.05
Incorporating a bias resistor into a
transistor reduces parts count.
1 2 3
6 5 4 0.1±0.05
Equivalent Circuit and Bias Resistor Values
C
0.48
+0.02 -0.04
B
R1
fS6
E
1.EMIITTER1 2.BASE1 3.COLLECTOR2 4.EMITTER2 5.BASE2 6.COLLECTOR1
(E1) (B1) (C2) (E2) (B2) (C1)
JEDEC JEITA
― ― 2-1F1D
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC (Note 1) Tj Tstg Rating −20 −20 −5 −50 50 150 −55~150 Unit V V V mA mW °C °C
TOSHIBA
Weight: 0.001 g (typ.)
Equivalent Circuit
(top view)
6 5 4
Q1
Q2
1
2
3
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the a...