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RN2964

Toshiba

Silicon PNP Transistor

RN2961~RN2966 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2961,RN2962,RN2963,RN2964,RN2965,RN2966 Swi...


Toshiba

RN2964

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Description
RN2961~RN2966 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2961,RN2962,RN2963,RN2964,RN2965,RN2966 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in US6 (ultra super mini type with 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1961~RN1966 Unit: mm Equivalent Circuit and Bias Resistor Values Type No. RN2961 RN2962 RN2963 RN2964 RN2965 RN2966 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 JEDEC EIAJ TOSHIBA Weight: 6.8mg ― ― 2-2J1B Equivalent Circuit (Top View) Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage RN2961~2966 RN2961~2964 RN2965, 2966 Collector current Collector power dissipation Junction temperature Storage temperature range IC PC * Tj Tstg Symbol VCBO VCEO Rating −50 −50 −10 −5 −100 200 150 −55~150 mA mW °C °C Unit V V * : Total rating 1 2001-06-07 Free Datasheet http://www.datasheet4u.com/ RN2961~RN2966 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector cut-off current RN2961~2966 RN2961 RN2962 Emitter cut-off current RN2963 RN2964 RN2965 RN2966 RN2961 RN2962 DC current gain RN2963 RN2964 RN2965 RN2966 Collector-emitter saturation voltage RN2961~2966 RN2961 RN2962 Input voltage (ON) RN2963 RN2964 RN2965 RN2966 Input voltage (OFF) Translation frequency Collector output capacitance RN2961~2964 RN2965, 2966 RN296...




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