RN2966CT

RN2961CT~RN2966CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2961CT,RN2962CT,RN2963CT RN2964CT,RN2965CT,RN2966CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.9±0.05 Unit: mm 1.0±0.05 0.15±0.03 0.2±0.03 ６ ５ ４ 0.6±0.02 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count, which enables the manufacture of ever more compact equipment and saves assembly cost. Complementary to RN1961CT to RN1966CT 0.2±0.03 １ ２ ３ 0.35±0.02 0.35±0.02 0.075±0.03 0.7±0.03 Equivalent Circuit and Bias Resistor Values C Type No. RN2961CT RN2962CT R2 RN2963CT RN2964CT E RN2965CT RN2966CT R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 0.38 +0.02 -0.03 1.EMIITTER1 2.EMITTER2 3.BASE2 4.COLLECTOR2 5.BASE1 CST6 6.COLLECTOR1 B R1 JEDEC JEITA TOSHIBA ― ― 2-1K1A Weight: 1.0 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2961CT to 2966CT RN2961CT to 2966CT RN2961CT to 2964CT RN2965CT, 2966CT Symbol VCBO VCEO VEBO IC PC (Note1) Tj Tstg Rating −20 −20 −10 −5 −50 140 150 −55 to 150 Unit V V V mA mW °C °C Equivalent Circuit (top view) 6 Q1 5 4 Q2 1 2 0.05±0.03 (E1) (E2) ...