RN2963FE

RN2961FE~RN2966FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2961FE,RN2962FE,RN2963FE RN2964FE,RN2965FE,RN2966FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Complementary to RN1961FE~RN1966FE Unit: mm Equivalent Circuit and Bias Resistor Values C Type No. RN2961FE RN2962FE R2 RN2963FE RN2964FE E RN2965FE RN2966FE R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 B R1 JEDEC JEITA TOSHIBA ― ― 2-2N1A Weight: 0.003 g (typ.) Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2961FE~2966FE RN2961FE~2966FE RN2961FE~2964FE RN2965FE, 2966FE Symbol VCBO VCEO VEBO IC PC (Note) Tj Tstg Rating −50 −50 −10 −5 −100 100 150 −55~150 Unit V V V mA mW °C °C Equivalent Circuit (top view) 6 5 4 Q1 Q2 1 2 3 Note: Total rating 1 2004-07-01 Free Datasheet http://www.datasheet4u.com/ RN2961FE~RN2966FE Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Collector cut-off current RN2961FE~2966FE RN2961FE RN2962FE Emitter cut-off current RN2963FE RN2964...