RN2966FS

RN2961FS~RN2966FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2961FS,RN2962FS,RN2963FS RN2964FS,RN2965FS,RN2966FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 0.1±0.05 0.8±0.05 0.1±0.05 0.15±0.05 Unit: mm Two devices are incorporated into a fine pitch Small Mold (6 pin) 0.35 0.35 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. 0.7±0.05 package. 1 2 3 6 5 4 0.1±0.05 Equivalent Circuit and Bias Resistor Values C Type No. RN2961FS RN2962FS R2 RN2963FS RN2964FS E RN2965FS RN2966FS R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 0.48 +0.02 -0.04 Complementary to RN1961FS~RN1966FS B R1 fS6 JEDEC JEITA 1.EMIITTER1 2.EMITTER2 3.BASE2 4.COLLECTOR2 5.BASE1 6.COLLECTOR1 (E1) (E2) (B2) (C2) (B1) (C1) ― ― 2-1F1C TOSHIBA Weight: 0.001 g (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2961FS~2966FS RN2961FS~2966FS RN2961FS~2964FS RN2965FS, 2966FS Symbol VCBO VCEO VEBO IC PC (Note 1) Tj Tstg Rating −20 −20 −10 −5 −50 50 150 −55~150 Unit V V V mA mW °C °C Equivalent Circuit (top view) 6 5 4 Q1 Q2 1 2 3 Note: Using continuously under ...