RN2969

RN2967~RN2969 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2967,RN2968,RN2969 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z Including two devices in US6 (ultra super mini type with 6 leads) z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process z Complementary to RN1967~RN1969 Unit: mm Equivalent Circuit and Bias Resistor Values Type No. RN2967 RN2968 RN2969 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 JEDEC ― JEITA ― TOSHIBA 2-2J1B Weight: 6.8mg (typ.) Equivalent Circuit (Top View) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector-base voltage Collector-emitter voltage RN2967~2969 RN2967 Emitter-base voltage RN2968 RN2969 Collector current Collector power dissipation Junction temperature Storage temperature range RN2967~2969 IC PC* Tj Tstg VEBO Symbol VCBO VCEO Rating −50 −50 −6 −7 −15 −100 200 150 −55~150 mA mW °C °C V Unit V V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual relia...