RN2969FE

RN2967FE~RN2969FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2967FE,RN2968FE,RN2969FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Complementary to RN1967FE~RN1969FE Unit: mm Equivalent Circuit and Bias Resistor Values C R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 Type No. RN2967FE RN2968FE B R1 R2 RN2969FE E JEDEC JEITA TOSHIBA ― ― 2-2N1A Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Collector-base voltage Collector-emitter voltage RN2967FE Emitter-base voltage RN2968FE RN2969FE Collector current Collector power dissipation Junction temperature Storage temperature range IC PC (Note 1) Tj Tstg VEBO Symbol VCBO VCEO Rating −50 −50 −6 −7 −15 −100 100 150 −55~150 mA mW °C °C V Unit V V Weight: 3 mg (typ.) Equivalent Circuit (top view) 6 5 4 Q1 Q2 1 2 3 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appro...