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RN2972CT

Toshiba

Silicon PNP Transistor

RN2972CT, RN2973CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN29...


Toshiba

RN2972CT

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Description
RN2972CT, RN2973CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2972CT, RN2973CT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 0.15±0.03 0.2±0.03 Unit: mm 0.9±0.05 Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. Complementary to RN1972CT and RN1973CT 0.2±0.03 Incorporating a bias resistor into a transistor reduces parts count. 1 2 3 0.35±0.02 0.35±0.02 0.075±0.03 0.7±0.03 Equivalent Circuit C B R1 CST6 JEDEC E 1.EMIITTER1 2.EMITTER2 3.BASE2 4.COLLECTOR2 5.BASE1 6.COLLECTOR1 0.38 +0.02 -0.03 0.6±0.02 Two devices are incorporated into a fine pitch Small Mold (6pin) package. 6 5 4 0.05±0.03 (E1) (E2) (B2) (C2) (B1) (C1) ― ― 2-1K1A JEITA TOSHIBA Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC* Tj Tstg Rating −20 −20 −5 −50 50 150 −55 to150 Unit V V V mA mW °C °C Weight: 1.0 mg (typ.) Equivalent Circuit (top view) 6 Q1 5 4 Q2 1 2 3 Note *: Total rating Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operat...




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