RN2972CT, RN2973CT
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN29...
RN2972CT, RN2973CT
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT process) (Bias Resistor built-in
Transistor)
RN2972CT, RN2973CT
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
1.0±0.05 0.15±0.03 0.2±0.03
Unit: mm
0.9±0.05
Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. Complementary to RN1972CT and RN1973CT
0.2±0.03
Incorporating a bias resistor into a
transistor reduces parts count.
1
2
3
0.35±0.02
0.35±0.02
0.075±0.03
0.7±0.03
Equivalent Circuit
C
B
R1
CST6 JEDEC
E
1.EMIITTER1 2.EMITTER2 3.BASE2 4.COLLECTOR2 5.BASE1 6.COLLECTOR1
0.38 +0.02 -0.03
0.6±0.02
Two devices are incorporated into a fine pitch Small Mold (6pin) package.
6
5
4
0.05±0.03
(E1) (E2) (B2) (C2) (B1) (C1)
― ― 2-1K1A
JEITA TOSHIBA
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC* Tj Tstg Rating −20 −20 −5 −50 50 150 −55 to150 Unit V V V mA mW °C °C
Weight: 1.0 mg (typ.)
Equivalent Circuit
(top view)
6 Q1 5 4 Q2
1
2
3
Note *: Total rating Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operat...