RN2972FS,RN2973FS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)
RN297...
RN2972FS,RN2973FS
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT process) (Bias Resistor Built-in
Transistor)
RN2972FS,RN2973FS
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Unit: mm Two devices are incorporated into a fine pitch small mold (6-pin) package. Incorporating a bias resistor into a
transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Complementary to RN1972FS, RN1973FS
1.0±0.05 0.1±0.05 0.35 0.35 0.8±0.05 0.1±0.05 0.15±0.05
1.0±0.05
0.7±0.05
1 2 3
6 5 4 0.1±0.05
Equivalent Circuit and Bias Resistor Values
C
+0.02 0.48 -0.04
B
R1
E
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC (Note 1) Tj Tstg Rating −20 −20 −5 −50 50 150 −55~150 Unit V V V mA mW °C °C
fS6
JEDEC JEITA
1.EMIITTER1 2.EMITTER2 3.BASE2 4.COLLECTOR2 5.BASE1 6.COLLECTOR1
(E1) (E2) (B2) (C2) (B1) (C1)
― ― 2-1F1C
TOSHIBA
Weight: 0.001g (typ.)
Equivalent Circuit
(top view)
6 5 4
Q1
Q2
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tem...