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TJ11A10M3
MOSFETs Silicon P-Channel MOS
Description
TJ11A10M3 MOSFETs Silicon P-Channel MOS (U-MOS) TJ11A10M3 1. Applications Switching Voltage
Regulator
s 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V) Enhancement mode: Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1...
Toshiba
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