TK100F06K3

MOSFETs Silicon N-channel MOS (U-MOS) TK100F06K3 1. Applications Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = 10 V) (3) High forward transfer admittance: |Yfs| = 174 S (typ.) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK100F06K3 TO-220SM(W) 1: Gate 2: Drain (Heatsink) 3: Source ©2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2008-03 2020-06-12 Rev.2.0 TK100F06K3 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20kΩ) VDGR 60 Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 100 A Drain current (pulsed) (Note 1) IDP 300 Power dissipation (Tc = 25) PD 180 W Single-pulse avalanche energy (Note 2) EAS 81 mJ Avalanche current IAR 100 A Repetitive avalanche energy (Note 3) EAR 18 mJ Channel temperature (Note 4) Tch 175  Storage temperature (Note 4) Tstg -55 to 175 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operatin...