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TK32A12N1

Toshiba

Silicon N-Channel MOSFET


Description
MOSFETs Silicon N-channel MOS (U-MOS-H) TK32A12N1 1. Applications Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 11.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK32A12N1 1: Ga...



Toshiba

TK32A12N1

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