DatasheetsPDF.com

TLP718 Dataheets PDF



Part Number TLP718
Manufacturers Toshiba
Logo Toshiba
Description Photocoupler
Datasheet TLP718 DatasheetTLP718 Datasheet (PDF)

TOSHIBA PHOTOCOUPLER IRED & PHOTO-IC TLP718 Isolated Bus Drivers High Speed Line Receivers Microprocessor System Interfaces 4.58±0.25 654 TLP718 Unit: mm 6.8±0.25 +0.2 5 −0.2 0 The Toshiba TLP718 consists of an infrared emitting diode and an integrated high-gain, high-speed photodetector. This unit is a 6-pin SDIP. The TLP718 is 50% smaller than the 8-PIN DIP and meets the reinforced insulation class requirements of international safety standards. Therefore the mounting area can be reduced.

  TLP718   TLP718


Document
TOSHIBA PHOTOCOUPLER IRED & PHOTO-IC TLP718 Isolated Bus Drivers High Speed Line Receivers Microprocessor System Interfaces 4.58±0.25 654 TLP718 Unit: mm 6.8±0.25 +0.2 5 −0.2 0 The Toshiba TLP718 consists of an infrared emitting diode and an integrated high-gain, high-speed photodetector. This unit is a 6-pin SDIP. The TLP718 is 50% smaller than the 8-PIN DIP and meets the reinforced insulation class requirements of international safety standards. Therefore the mounting area can be reduced in equipment requiring safety standard certification. The detector has a totem pole output stage to provide both source and sink driving. The detector IC has an internal shield that provides a guaranteed common-mode transient immunity of 10 kV/μs. The TLP718 is inverter logic type. For buffer logic type, the TLP715 is in lineup. 123 1.27±0.2 3.65 +0.1 5 −0.2 5 0.25± +0.10 −0.0 5 7.62±0.25 1.25±0.25 4. 0  Inverter logic type (totem pole output) 0.4±0.1 9.7±0.3  Guaranteed performance over temperature : −40 to 100°C  Power supply voltage : 4.5 to 20 V  Input current: IFHL = 3 mA (max)  Switching time ( tpHL / tpLH) : 250 ns (max)  Common-mode transient immunity : ±10 kV/μs (min)  Isolation voltage : 5000 Vrms (min)  UL-recognized: UL 1577, File No.E67349  cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349  VDE-approved: EN 60747-5-5 , EN 62368-1 (Note1) TOSHIBA 11-5J1S Weight: 0.26 g (typ.) Pin Configuration (Top View) 1 VCC 6 1: ANODE 2: N.C. 2 5 3: CATHODE 4: GND GND 3 SHIELD 4 5: VO (Output) 6: VCC Note 1 : When a VDE approved type is needed, please designate the Option(D4).  Construction Mechanical Rating 7.62 mm pitch standard type Creepage Distance Clearance Insulation Thickness 7.0 mm (min) 7.0 mm (min) 0.4 mm (min) 10.16 mm pitch TLPXXXF type 8.0 mm (min) 8.0 mm (min) 0.4 mm (min) Truth Table Input LED Tr1 Tr2 Output H ON OFF ON L L OFF ON OFF H © 2019 1 Toshiba Electronic Devices & Storage Corporation Schematic IF 1+ VF 3- ICC VCC 6 (Note) Tr1 IO VO Tr2 5 SHIELD GND 4 Note: 0.1 μF bypass capacitor must be connected between pins 6 and 4. Start of commercial production 2008-12 2019-06-03 TLP718 Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Forward Current (Ta ≤ 83°C) Forward Current Derating (Ta ≥ 83°C) Peak Transient Forward Current Reverse Voltage Input power dissipation Input power dissipation derating (Ta ≥ 83°C) IF ΔIF/ΔTa (Note 1) IFPT VR PD ΔPD/ΔTa 20 −0.48 1 5 40 -0.96 mA mA/°C A V mW mW/℃ LED Junction Temperature Tj 125 °C DETECTOR Output Current 1 (Ta ≤ 25°C) Output Current 2 (Ta ≤ 100°C) Output Voltage Supply Voltage Output power dissipation Output power dissipation derating (Ta ≥ 25°C) Junction Temperature IO1 25 / −15 mA IO2 13 / −13 mA VO −0.5 to 20 V VCC −0.5 to 20 V PO 75 mW ΔPO/ΔTa −0.75 mW / °C Tj 125 °C Operating Temperature Range Topr −40 to 100 °C Storage Temperature Range Tstg −55 to 125 °C Lead Solder Temperature (10 s) Tsol 260 °C Isolation Voltage (AC, 60 s, R.H. ≤ 60 %) (Note 2) BVS 5000 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width PW ≤ 1 μs, 300 pps. Note 2: Device Considered a two terminal device: pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT Input Current, ON IF (ON) 4.5 − 10 mA Input Voltage, OFF VF (OFF) 0 − 0.8 V Supply Voltage (Note 1) VCC 4.5 − 20 V Operating Temperature Topr -40 − 100 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note 1: This item denotes operating ranges, not meaning of recommended operating conditions. © 2019 2 Toshiba Electronic Devices & Storage Corporation 2019-06-03 Electrical Characteristics (Unless otherwise specified, Ta = −40 to 100°C, VCC = 4.5 to 20 V) TLP718 TEST CHARACTERISTIC SYMBOL CIRCUIT CONDITION MIN Input forward voltage VF ― IF = 5 mA, Ta = 25 °C 1.4 Temperature coefficient of ΔVF/ΔTa ― IF = 5 mA ― for.


TLP719 TLP718 TLP716F


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)