TLP759F

TOSHIBA Photocoupler IRED+Photo−IC TLP759F Digital Logic Ground Isolation Line Receiver Microprocessor System Interfaces Switching Power Supply Feedback Control Industrial Inverter TLP759F Unit: mm The TOSHIBA TLP759F consists of a high−output infrared emitting diode and a high speed detector of one chip photo diode−transistor. This unit is 8-lead DIP. TLP759F has no internal base connection, and a Faraday shield integrated on the photodetector chip provides an effective common mode noise transient immunity. So this is suitable for application in noisy environmental condition. Isolation voltage: 5000 Vrms (min) Switching speed: tpHL = 0.2μs (typ.) tpLH = 0.3μs (typ.) (RL=1.9 kΩ) TTL compatible UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5 (Note 1) Note 1: When a VDE approved type is needed, please designate the Option (D4). Mechanical Parameters Creepage distance: 8.0 mm (min) Clearance: 8.0 mm (min) Insulation thickness: 0.4 mm (min) TOSHIBA 11−10C402S Weight: 0.54 g (typ.) Pin Configuration (top view) 1 2 3 4 SHIELD 8 1: N.C. 2: Anode 3: Cathode 7 4: N.C. 5: Emitter(gnd) 6 6: Collector(output) 7: N.C. 5 8: Vcc Schematic IF 2 VF 3 Shield ICC IO VCC 8 VO 6 GND 5 © 2019 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1995-08 2019-06-10 Absolute Maximum Ratings (Ta = 25°C) TLP759F Characteristic Symbol Rating Unit Dete...