DatasheetsPDF.com

TPC8126 Dataheets PDF



Part Number TPC8126
Manufacturers Toshiba
Logo Toshiba
Description MOSFET
Datasheet TPC8126 DatasheetTPC8126 Datasheet (PDF)

TPC8126 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8126 Lithium Ion Battery Applications Power Management Switch Applications • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.5 mΩ (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 .

  TPC8126   TPC8126



Document
TPC8126 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8126 Lithium Ion Battery Applications Power Management Switch Applications • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.5 mΩ (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR Tch Tstg Rating −30 −30 −25/+20 −11 −44 1.9 1.0 79 −11 150 −55 to 150 Unit V V V A W W mJ A °C °C Pulse (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Channel temperature Storage temperature range (Note 1) JEDEC JEITA TOSHIBA ⎯ ⎯ 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 8 7 6 5 Note 1, Note 2, Note 3 : See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2 3 4 1 2009-11-19 Free Datasheet http://www.datasheet4u.com/ TPC8126 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 65.8 125 Unit °C/W °C/W Marking (Note 4) TPC8126 Part No. (or abbreviation code) Lot No. Note 5 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a)Device mounted on a glass-epoxy board (a) (b)Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = −24 V, Tch = 25 °C (initial), L = 500 μH, RG = 25 Ω, IAR = −11 A Note 4: • on lower left of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) Note 5: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of th.


TPC8127 TPC8126 TPC8405


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)