TPC8407

MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H) TPC8407 1. Applications Motor Drivers CCFL Inverters Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) High speed switching (3) Low drain-source on-resistance P-channel RDS(ON) = 18 mΩ (typ.) (VGS = -10 V), N-channel RDS(ON) = 14 mΩ (typ.) (VGS = 10 V) (4) Low leakage current P-channel IDSS = -10 µA (VDS = -30 V), N-channel IDSS = 10 µA (VDS = 30 V) (5) Enhancement mode P-channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA), N-channel Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPC8407 SOP-8 1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8: Drain 1 Start of commercial production 2011-03 1 2014-01-07 Rev.2.0 TPC8407 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Drain-source voltage Characteristics Gate-source voltage P/N Symbol Rating Unit P-ch VDSS -30 V N-ch 30 P-ch VGSS ±20 N-ch ±20 Drain current (DC) Drain current (pulsed) Power dissipation (single operation) Power dissipation (per device for dual operation) Power dissipation (single operation) Power dissipation (per device for dual operation) Single-pulse avalanche energy Avalanche current (t = 10 s) (t = 10 s) (t = 10 s) (t = 10 s) (Note 1) (Note 1) (Note 2), (Note 4) (Note 2), (Note 5) (Note 3), (Note 4) (Note 3), (Note 5) (Note 6) P-ch N-ch P-ch N-ch P-ch N-ch P-ch N-ch P-ch N-ch P-ch N-ch P-ch N-ch P-ch N-ch ID IDP P...