TPCA8A04-H
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H)
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TPCA8A04-H
TOSHIBA Field Effect
Transistor with Built-in
Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H)
TPCA8A04-H
0.5 ± 0.1
High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
Built-in a
schottky barrier diode
6.0 ± 0.3
Unit: mm
0.4 ± 0.1 5
8
1.27
0.05 M A
5.0 ± 0.2
Low forward voltage: VDSF = −0.6 V (max) High-speed switching Small gate charge: QSW = 13.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 2.3 mΩ (typ.) High forward transfer admittance: |Yfs| = 127 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA)
0.15 ± 0.05
0.95 ± 0.05
1
4
0.595 0.166 ± 0.05 A
5.0 ± 0.2
S 0.6 ± 0.1
1
4
4.25 ± 0.2
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR
Rating 30 30 ±20 44 132 45 2.8
Unit
8
5 0.8 ± 0.1
V V V A W W
1,2,3 : SOURCE 4 : GATE 5,6,7,8 : DRAIN
JEDEC JEITA TOSHIBA
― ― 2-5Q1A
Pulsed (Note 1) (Tc=25℃) (t = 10 s) (Note 2a)
Drain power dissipation Drain power dissipation
Weight: 0.069 g (typ.)
Drain power dissipation
(t = 10 s) (Note 2b)
1.6
W
Circuit Configuration
8 7 6 5
Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range
252 44 3.32 150 −55 to 150
mJ A mJ °C °C
EAR Tch Tstg
1
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